MMBTH10LT3G View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
| MMBTH10LT3G Datasheet PDF : 0 Pages | |||
MMBTH10LT1G,
MMBTH10-4LT1G
VHF/UHF Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
25
Vdc
30
Vdc
3.0
Vdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
RθJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
Junction to Ambient (Note 2)
RθJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 3
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236AB)
CASE 318
STYLE 6
MARKING DIAGRAMS
3EM MG
G
3E4 MG
G
MMBTH10LT1G
MMBTH10−04LT1G
3EM, 3E4 = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBTH10LT1G
Package
SOT−23
(Pb−Free)
Shipping†
3000/Tape &
Reel
MMBTH10LT3G
SOT−23 10000/Tape &
(Pb−Free)
Reel
MMBTH10−4LT1G SOT−23 3000/Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBTH10LT1/D
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