MMBT2907A-G View Datasheet(PDF) - ComChip
Part Name
Description
Manufacturer
| MMBT2907A-G Datasheet PDF : 0 Pages | |||
General Purpose Transistor
MMBT2907A-G (PNP)
RoHS Device
SMD Diodes Specialist
Features
-Epitaxial planar die construction
-Device is designed as a general purpose
amplifier and switching.
-Useful dynamic range exceeds to 600mA
As a switch and to 100MHz as an amplifier.
Collector
3
1
Base
2
Emitter
0.056 (1.40)
0.047 (1.20)
0.044 (1.10)
0.035 (0.90)
SOT-23
0.119 (3.00)
0.110 (2.80)
3
1
2
0.083 (2.10)
0.066 (1.70)
0.006 (0.15)
0.002 (0.05)
0.103 (2.60)
0.086 (2.20)
0.020 (0.50)
0.013 (0.35)
0.006 (0.15) max
0.007 (0.20) min
Dimensions in inches and (millimeter)
O
Maximum Ratings(at TA=25 C unless otherwise noted)
Parameter
Collector-Base voltage
Collector-Emitter voltage
Symbol
VCBO
VCEO
Min
Emitter-Base voltage
Collector current-Continuous
VEBO
IC
Tot al de vice di ssipa tioi n
PD
Th er mal res istan ce jun ction to ambi en t
R JA
St or ag e tempe rat ur e an d jun ction tempe rat ur e
TSTG , TJ
-55
Typ
Max
-60
-60
-5
-0.6
0. 35
35 7
+1 50
Unit
V
V
V
A
W
oC/ W
oC
QW-BTR03
REV:A
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