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FGB30N6S2D View Datasheet(PDF) -

Part Name
Description
Manufacturer
FGB30N6S2D
 
FGB30N6S2D Datasheet PDF : 0 Pages
Package Marking and Ordering Information
Device Marking
30N6S2D
30N6S2D
30N6S2D
Device
FGB30N6S2D
FGP30N6S2D
FGH30N6S2D
Package
TO-263AB
TO-220AB
TO-247
Tape Width
24mm
-
Quantity
800
-
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0
600
ICES Collector to Emitter Leakage Current VCE = 600V TJ = 25°C
-
TJ = 125°C -
IGES Gate to Emitter Leakage Current
VGE = ± 20V
-
-
-
V
-
250
µA
-
2
mA
-
±250 nA
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage IC = 12A,
TJ = 25°C
-
1.95 2.5
V
VGE = 15V
TJ = 125°C
-
1.8
2.0
V
VEC
Diode Forward Voltage
IEC = 12A
-
2.1
2.5
V
Dynamic Characteristics
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP Gate to Emitter Plateau Voltage
IC = 12A,
VGE = 15V
-
VCE = 300V VGE = 20V
-
23
29
nC
26
33
nC
IC = 250µA, VCE = 600V
3.5
4.3
5.0
V
IC = 12A, VCE = 300V
-
6.5
8.0
V
Switching Characteristics
SSOA Switching SOA
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
trr
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Diode Reverse Recovery Time
TJ = 150°C, RG = 10Ω, VGE = 60
-
15V, L = 100µH, VCE = 600V
-
A
IGBT and Diode at TJ = 25°C, -
6
-
ns
ICE =12A,
-
10
-
ns
VCE = 390V,
VGE = 15V,
RG =10
L = 500µH
Test Circuit - Figure 26
-
40
-
ns
-
53
-
ns
-
55
-
µJ
-
110
-
µJ
-
100 150
µJ
IGBT and Diode at TJ = 125°C -
ICE = 12A,
-
VCE = 390V,
-
VGE = 15V,
RG = 10
L = 500µH
-
-
Test Circuit - Figure 26
-
-
11
-
ns
17
-
ns
73
100
ns
90
100
ns
55
-
µJ
160 200
µJ
250 350
µJ
IEC = 12A, dIEC/dt = 200A/µs
-
IEC = 1A, dIEC/dt = 200A/µs
-
35
46
ns
25
32
ns
Thermal Characteristics
RθJC
NOTE:
Thermal Resistance Junction-Case
IGBT
Diode
-
-
0.75 °C/W
-
-
2.0 °C/W
2ao.sfVtthaheleueIIGGsBBfoTTr.otTwnhloye.TEduOironNd-2Oeinstytlpohesesistucsronpn-edocintiifoileondsssianwrfehigesunhroeaw2tny6p.foicratlhdeiocdoenvisenuiseendceinotfhtehetecsitrccuirictuditeasnigdnethr.eEdOioNd1eisisthaet
turn-on loss
the same TJ
3tJh.EeTDuiErnnpC-uOStfftpauEnlnsdeearrgadynNdLooe.sn2sd4i(-nE1gOMaFeFt )tthhioseddpfeoofirinnMtewdeahasesuretrhetemheienntcetogollrfeaPcl otoowfretchrueDrrienevsnittcaeenqTtauunarenlso-OuzesffrpSoow(wIiCtecErhi=lnogs0sALso).tsaAsr.ltliTndhgeisvaitcteethsstewmtreeartiehlinotgedspeterdodgdepueocr-f
es the true total Turn-Off Energy Loss.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
 

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