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MMBD2837LT1G View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
MMBD2837LT1G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MMBD2837LT1G Datasheet PDF : 4 Pages
1 2 3 4
MMBD2837LT1G, MMBD2838LT1G
ELECTRICAL CHARACTERISTICS (EACH DIODE) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 mAdc)
MMBD2837LT1G
MMBD2838LT1G
Reverse Voltage Leakage Current (Note 3.)
(VR = 30 Vdc)
(VR = 50 Vdc)
MMBD2837LT1G
MMBD2838LT1G
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
3. For each individual diode while the second diode is unbiased.
V(BR)
IR
CT
VF
trr
Min Max Unit
35
Vdc
75
mAdc
0.1
0.1
4.0
pF
1.0 Vdc
1.0
1.2
4.0
ns
820 W
+10 V
2.0 k
100 mH IF
0.1 mF
DUT
50 W OUTPUT
PULSE
GENERATOR
0.1 mF
tr
tp
t
10%
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
IF
trr
t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
 

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