MMBD2837LT1G, MMBD2838LT1G
ELECTRICAL CHARACTERISTICS (EACH DIODE) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 mAdc)
MMBD2837LT1G
MMBD2838LT1G
Reverse Voltage Leakage Current (Note 3.)
(VR = 30 Vdc)
(VR = 50 Vdc)
MMBD2837LT1G
MMBD2838LT1G
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
3. For each individual diode while the second diode is unbiased.
V(BR)
IR
CT
VF
trr
Min Max Unit
35
−
Vdc
75
−
mAdc
−
0.1
−
0.1
−
4.0
pF
−
1.0 Vdc
−
1.0
−
1.2
−
4.0
ns
820 W
+10 V
2.0 k
100 mH IF
0.1 mF
DUT
50 W OUTPUT
PULSE
GENERATOR
0.1 mF
tr
tp
t
10%
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
IF
trr
t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2