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MJE13002B-BP View Datasheet(PDF) - Micro Commercial Components

Part NameMJE13002B-BP MCC
Micro Commercial Components MCC
DescriptionNPN Silicon Plastic-Encapsulate Transistor
MJE13002B-BP Datasheet PDF : 2 Pages
1 2
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
MJE13002B
Features
Capable of 900mWatts of Power Dissipation.
Collector-current 0.8A
Collector-base Voltage 600V
Operating and storage junction temperature range: -55OC to +150OC
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
Collector Cutoff Current
(VCB=600Vdc, IE=0)
Emitter Cutoff Current
(VEB=6.0Vdc, IC=0)
400
Vdc
600
Vdc
6.0
Vdc
100 uAdc
100 uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=10mAdc, VCE=10Vdc)
hFE(2)
DC Current Gain
(IC=200mAdc, VCE=10Vdc)
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
(IC=200mAdc, IB=40mAdc)
Base-Emitter Saturation Voltage
(IC=200mAdc, IB=40mAdc)
SMALL-SIGNAL CHARACTERISTICS
6
9.0
40
0.5
Vdc
1.1
Vdc
fT
Transistor Frequency
(IC=100mAdc, VCE=10Vdc, f=1.0MHz)
5.0
MHz
tF
Fall Time
V CC=100V,IC=1.0A ,
0.5
uS
tS
Storage Time
IB1=IB2=0.2A
2.5
uS
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
B
C
D
EC
G
B
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.175
.185
B
.175
.185
C
.500
---
D
.016
.020
E
.135
.145
G
.095
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
Revision: A
www.mccsemi.com
1 of 2
2011/01/01
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