MJE13001(Ver_A) View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

MJE13001
(Rev.:Ver_A)

NPN EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

UTC MJE13001

NPN EPITAXIAL SILICON TRANSISTOR

FEATURES

* Collector-Base Voltage: V(BR)CBO=600V

* Collector Current: IC=0.2A

1

TO-92

1: BASE 2: COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction Temperature

Storage Temperature

SYMBOL

VCBO

VCEO

VEBO

Ic

Pc

Tj

TSTG

RATING

600

400

7

200

750

150

-55 ~ +150

UNIT

V

V

V

mA

mW

°C

°C

ELECTRICAL CHARACTERISTICS (Tc=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Base Breakdown Voltage V(BR)CBO

IC=100µA, IE=0

Collector-Emitter Breakdown Voltage V(BR)CEO

Ic=1mA, IB=0

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=100µA, IC=0

Collector Cut-off Current

ICBO

VCB=600V, IE=0

Collector Cut-off Current

ICEO

VCE=400V, IB=0

Emitter Cut-off Current

IEBO

VEB=7V, IC=0

DC current gain

hFE(1)

VCE=20V, Ic=20mA

hFE(2)

VCE=10V, Ic=0.25mA

Collector-emitter saturation voltage VCE(sat)

Ic=50mA, IB=10mA

Base-emitter Saturation Voltage

VBE(sat)

Ic=50mA, IB=10mA

Base-emitter Voltage

VBE

IE=100mA

Transition Frequency

fT

VCE=20V, Ic=20mA, f=1MHz

Fall Time

Storage Time

tF

Ic=50mA, IB1=-IB2=5mA,

tS

Vcc=45V

MIN TYP MAX UNIT

600

V

400

V

7

V

100 µA

200 µA

100 µA

10

70

5

0.5

V

1.2

V

1.1

V

8

MHz

0.3 µs

1.5 µs

UTC UNISONIC TECHNOLOGIES CO. LTD

1

QW-R201-055,A

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