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MJE13001-X-X-T92-B-2015 View Datasheet(PDF) - Unisonic Technologies

Part NameMJE13001-X-X-T92-B(2015) UTC
Unisonic Technologies UTC
DescriptionNPN SILICON POWER TRANSISTOR
MJE13001-X-X-T92-B Datasheet PDF : 3 Pages
1 2 3
MJE13001
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
Collector-Base Voltage
VCEO
400
V
VCBO
600
V
Emitter Base Voltage
Collector Current
VEBO
IC
7
V
200
mA
Collector Power Dissipation
SOT-89
TO-92
PC
550
750
mW
Junction Temperature
Storage Temperature
TJ
TSTG
+150
°C
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Base-Emitter Voltage
Collector Cutoff Cut-Off Current
Collector Emitter Cut-Off Current
Emitter Cutoff Cut-Off Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
Resistive Load
Storage Time
Fall Time
CLASSIFICATION OF hFE1*
SYMBOL
BVCBO
BVCEO
BVEBO
VBE
ICBO
ICEO
IEBO
TEST CONDITIONS
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA, IC=0
IE=100 mA
VCB=600V, IE=0A
VCE=400V, IB=0
VEB=7V, IC=0A
MIN TYP MAX UNIT
600
V
400
V
7
V
1.1 V
100 μA
200 μA
100 μA
hFE1*
VCE=20 V, IC=20mA
10
hFE2
VCE=10V, IC=0.25mA
5
VCE(SAT) IC=50mA, IB=10mA
VBE(SAT) IC=50mA, IB=10mA
70
0.5 V
1.2 V
fT
IC=20mA,VCE=20V,f=1MHz 8
MHz
tS
IC=50mA, IB1=-IB2=5mA,
tF
VCC=45V
1.5 μs
0.3 μs
RANK A
B
C
D
E
F
G
H
I
J
K
L
RANGE 10-15 15-20 20-25 25-30 30-35 35-40 40-45 45-50 50-55 55-60 60-65 65-70
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-055.I
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