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MJ16016 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
MJ16016
Iscsemi
Inchange Semiconductor Iscsemi
MJ16016 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ16016
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0
450
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VCE(sat)-2
VBE(sat)
ICEV
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 15A; IB= 1.5A
IC= 15A; IB= 1.5A,TC=100
IC= 15A; IB= 1.5A
IC= 15A; IB= 1.5A,TC=100
VCEV=850V;VBE(off)=1.5V
VCEV=850V;VBE(off)=1.5V;TC=100
ICER
Collector Cutoff Current
VCE= 850V; RBE= 50Ω,TC= 100
2.5
V
3.0
3.0
V
1.5
1.5
V
0.25
1.5
mA
2.5 mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
1.0 mA
hFE
DC Current Gain
IC= 20A ; VCE= 5V
7
COB
Output Capacitance
Switching times;Resistive Load
IE= 0; VCB= 10V; ftest=1.0kHz
500 pF
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC= 15A , VCC= 250V, RB2= 1.6Ω
IB1= 1.5A;IB2= -3A, PW= 30μs
Duty Cycle2.0%
20 50 ns
200 500 ns
900 2200 ns
100 250 ns
isc Websitewww.iscsemi.cn
2
 

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