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MJ21196G View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
MJ21196G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MJ21196G Datasheet PDF : 0 Pages
MJ21195 − PNP MJ21196 − NPN
TYPICAL CHARACTERISTICS
3.0
2.5
TJ = 25°C
IC/IB = 10
2.0
PNP MJ21195
1.6
1.4
TJ = 25°C
IC/IB = 10
1.2
1.0
NPN MJ21196
VBE(sat)
1.5
VBE(sat)
1.0
VCE(sat)
0.5
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
0.8
0.6
0.4
VCE(sat)
0.2
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Saturation Voltages
10
TJ = 25°C
PNP MJ21195
10
TJ = 25°C
NPN MJ21196
VCE = 5 V (DASHED)
VCE = 20 V (SOLID)
1.0
1.0
VCE = 5 V (DASHED)
VCE = 20 V (SOLID)
0.1
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
0.1
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Typical Base−Emitter Voltage
100
10 ms
10
50 ms
1 sec
250 ms
1.0
0.1
1.0
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
There are two limitations on the power handling
ability of a transistor; average junction temperature
and secondary breakdown. Safe operating area curves
indicate IC − VCE limits of the transistor that must be
observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the
curves indicate.
The data of Figure 13 is based on TJ(pk) = 200°C;
TC is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the
power than can be handled to values less than the
limitations imposed by second breakdown.
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