DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

MJ11033G View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
MJ11033G Datasheet PDF : 2 Pages
1 2
MJ11028, MJ11030,
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)
High-Current
Complementary Silicon
Power Transistors
HighCurrent Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
High DC Current Gain hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
Curves to 100 A (Pulsed)
Diode Protection to Rated IC
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor
Junction Temperature to + 200_C
PbFree Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MJ11028/29
MJ11030
MJ11032/33
VCEO
60
Vdc
90
120
CollectorBase Voltage
MJ11028/29
MJ11030
MJ11032/33
VCBO
60
Vdc
90
120
EmitterBase Voltage
Collector Current Continuous
Peak (Note 1)
VEBO
IC
5.0
Vdc
50
Adc
100
Base Current Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C @ TC = 100_C
Operating and Storage Junction
Temperature Range
IB
PD
TJ, Tstg
2.0
Adc
300
W
1.71
W/°C
55 to +200 °C
THERMAL CHARACTERISTICS
Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Lead Temperature for
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Soldering Purposes for v 10 seconds
Symbol
Max
Unit
TL
275
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, JunctiontoCase
RqJC
0.58
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
September, 2008 Rev. 6
http://onsemi.com
50 AMPERE
COMPLEMENTARY
DARLINGTON POWER
TRANSISTORS
60 120 VOLTS
300 WATTS
NPN
COLLECTOR
CASE
BASE
1
PNP
COLLECTOR
CASE
BASE
1
EMITTER 2
MJ11028
MJ11030
MJ11032
EMITTER 2
MJ11029
MJ11033
MARKING
DIAGRAM
1
2
TO204 (TO3)
CASE 197A
STYLE 1
MJ110xxG
AYYWW
MEX
MJ110xx = Device Code
xx = 28, 29, 30, 32, 33
G
= PbFree Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
MJ11028/D
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]