MJ15011 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MJ15011 Datasheet PDF : 4 Pages
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MJ15011 (NPN),
MJ15012 (PNP)
Preferred Devices
Complementary Silicon
Power Transistors
The MJ15011 and MJ15012 are PowerBase power transistors
designed for high−power audio, disk head positioners, and other linear
applications. These devices can also be used in power switching
circuits such as relay or solenoid drivers, dc−to−dc converters or
inverters.
• High Safe Operating Area (100% Tested)
1.2 A @ 100 V
• Completely Characterized for Linear Operation
• High DC Current Gain and Low Saturation Voltage
hFE = 20 (Min) @ 2 A, 2 V
VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A
• For Low Distortion Complementary Designs
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current − Continuous
− Peak (Note 1)
Emitter Current − Continuous
− Peak (Note 1)
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCEX
VEB
IC
ICM
IB
IBM
IE
IEM
PD
TJ, Tstg
Value
250
250
5
10
15
2
5
12
20
200
1.14
– 65 to
+ 200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
W/_C
_C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for
Soldering Purposes
Symbol
RθJC
TL
Max
0.875
265
Unit
_C/W
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
December, 2005 − Rev. 3
http://onsemi.com
10 AMPERE
COMPLEMENTARY
POWER TRANSISTORS
250 VOLTS
200 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1501xG
AYYWW
MEX
MJ1501x = Device Code
x = 1 or 2
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
ORDERING INFORMATION
Device
MJ15011
MJ15011G
MJ15012
MJ15012G
Package
TO−204AA
TO−204AA
(Pb−Free)
TO−204AA
TO−204AA
(Pb−Free)
Shipping
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJ15011/D
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