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Part Name
Description
F1210 View Datasheet(PDF) - Polyfet RF Devices
Part Name
Description
Manufacturer
F1210
PATENTED GOLD METALIZED 10Watts Single Ended SILICON GATE NHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
F1210 Datasheet PDF : 2 Pages
1
2
POUT VS PIN GRAPH
F2012
CAPACITANCE VS VOLTAGE
18
16
14
12
10
8
6
4
2
0
0
F2012 POUT VS PIN FREQ=1000 MHZ; IDQ=0.8A; VDS=28V
GAIN
POUT
Efficiency = 35%
0.5
1
1.5
2
Pin in Watts
POUT
PIN
11.5
11
10.5
10
9.5
9
8.5
8
2.5
IV CURVE
F2A 4 DIE CAPACITANCE
100
Ciss
Coss
10
Crss
1
0
5
10
15
20
25
30
VDS IN VOLTS
ID AND GM VS VGS
6
5
4
3
2
1
0
0
2
VGS = 2V
F2A 4 DIE IV CURVE
4
6
VGS = 4V
8
10
12
VDS IN VOLTS
VGS = 6V
VGS = 8V
14
16
VGS = 10V
18
20
VGS 12V
F2A 4 DIE GM & ID vs VGS
10
Id
1
Gm
0.1
0.01
0
2
4
6
8
10
12
14
16
18
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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