AM4920N-T1-XX View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
| AM4920N-T1-XX Datasheet PDF : 0 Pages | |||
Freescale
AO48 42 / MC48 42
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SO-8 Surface Mount Package
Saves Board Space
• High power and current handling capability
• Low side high current DC-DC Converter
applications
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30
34 @ VGS = 10V
41 @ VGS = 4.5V
ID (A)
6.9
6.0
1
8
2
7
3
6
4
5
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
IS
TA=25oC
TA=70oC
PD
30
± 20
± 6.9
± 5.6
± 40
1.7
2.1
1.3
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady-State
Symbol
RθJA
Maximum
62.5
110
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
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