DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

MC-458CB647 View Datasheet(PDF) - Elpida Memory, Inc

Part Name
Description
Manufacturer
MC-458CB647 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MC-458CB647
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Voltage on power supply pin relative to GND
Voltage on input pin relative to GND
Short circuit output current
EPower dissipation
Operating ambient temperature
Storage temperature
Symbol
VCC
VT
IO
PD
TA
Tstg
Condition
Rating
Unit
–0.5 to +4.6
V
–0.5 to +4.6
V
50
mA
4
W
0 to 70
°C
–55 to +125
°C
OCaution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
Lconditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Supply voltage
VCC
High level input voltage
VIH
P Low level input voltage
VIL
Operating ambient temperature
TA
Condition
MIN.
3.0
2.0
0.3
0
TYP. MAX. Unit
3.3
3.6
V
VCC + 0.3 V
+0.8
V
70
°C
r Capacitance (TA = 25 °C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN. TYP. MAX. Unit
o Input capacitance
CI1 A0 - A11, BA0(A13), BA1(A12), /RAS, /CAS, /WE 15
CI2 CLK0, CLK2
20
CI3 CKE0
15
d CI4 /CS0, /CS2
10
CI5 DQMB0 - DQMB7
3
uct Data input/output capacitance
CI/O DQ0 - DQ63
4
40
pF
40
40
20
13
13
pF
Data Sheet E0062N20
5
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]