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MC-4516DA726P 查看數據表(PDF) - Elpida Memory, Inc

零件编号产品描述 (功能)生产厂家
MC-4516DA726P 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Elpida
Elpida Memory, Inc Elpida
MC-4516DA726P Datasheet PDF : 16 Pages
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MC-4516DA726
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up, wait more than 1 ms and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
EVoltage on power supply pin relative to GND
VCC
Voltage on input pin relative to GND
VT
–0.5 to +4.6
V
–0.5 to +4.6
V
Short circuit output current
IO
Power dissipation
PD
OOperating ambient temperature
TA
Storage temperature
Tstg
50
mA
12
W
0 to 70
°C
–55 to +125
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
Lpermanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
P Supply voltage
High level input voltage
Low level input voltage
r Operating ambient temperature
Symbol
VCC
VIH
VIL
TA
Condition
MIN.
3.0
2.0
–0.3
0
TYP. MAX. Unit
3.3
3.6
V
VCC + 0.3 V
+0.8
V
70
°C
o Capacitance (TA = 25 °C, f = 1 MHz)
Parameter
Symbol
Test condition
d Input capacitance
CI1 A0 – A11, BA0 (A13), BA1 (A12),
/RAS, /CAS, /WE
CI2
CLK0
CI3
CKE0
CI4 /CS0, /CS2
u CI5 DQMB0 - DQMB7
ct Data input/output capacitance
CI/O DQ0 - DQ63, CB0 - CB7
MIN. TYP. MAX. Unit
4
10
pF
15
25
4
10
4
10
3
10
5
13
pF
Data Sheet E0074N10
5
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