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MBM29LV652UE-12 查看數據表(PDF) - Fujitsu

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MBM29LV652UE-12 FLASH MEMORY CMOS 64M (4M × 16) BIT Fujitsu
Fujitsu Fujitsu
MBM29LV652UE-12 Datasheet PDF : 58 Pages
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MBM29LV652UE-90/12
Addresses
3rd Bus Cycle
XXXh
PA
tWC
tAS
tAH
CE
OE
WE
Data
tCS
tCH
tGHWL
tWP tWPH
tDS
tDH
A0h
PD
Data Polling
PA
tWHWH1
tDF
DQ7 DOUT
tRC
tCE
tOE
tOH
DOUT
Notes: 1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence.
Figure 6 Alternate WE Controlled Program Operation Timing Diagram
39
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