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MBM29LV652UE-12 查看數據表(PDF) - Fujitsu

零件编号产品描述 (功能)生产厂家
MBM29LV652UE-12 FLASH MEMORY CMOS 64M (4M × 16) BIT Fujitsu
Fujitsu Fujitsu
MBM29LV652UE-12 Datasheet PDF : 58 Pages
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MBM29LV652UE-90/12
• Write (Erase/Program) Operations
Parameter Symbols
JEDEC Standard
Description
tAVAV
tWC Write Cycle Time
tAVWL
tAS Address Setup Time
tWLAX
tAH Address Hold Time
tDVWH
tDS Data Setup Time
tWHDX
tDH Data Hold Time
tOES Output Enable Setup Time
Read
tOEH Output Enable Hold Time
Toggle and Data Polling
tGHWL
tGHWL Read Recover Time Before Write
tGHEL
tGHEL Read Recover Time Before Write
tELWL
tCS CE Setup Time
tWLEL
tWS WE Setup Time
tWHEH
tCH CE Hold Time
tEHWH
tWH WE Hold Time
tWLWH
tWP Write Pulse Width
tELEH
tCP CE Pulse Width
tWHWL
tWPH Write Pulse Width High
tEHEL
tCPH CE Pulse Width High
tWHWH1
tWHWH1 Word Programming Operation
tWHWH2
tWHWH2 Sector Erase Operation (Note 1)
tVCS VCC Setup Time
tVIDR Rise Time to VID (Note 2)
tVACCR Rise Time to VACC (Note 3)
tVLHT Voltage Transition Time (Note 2)
tWPP Write Pulse Width (Note 2)
tOESP OE Setup Time to WE Active (Note 2)
tCSP CE Setup Time to WE Active (Note 2)
tRB Recover Time From RY/BY
tRP RESET Pulse Width
90
Min. 90
Min. 0
Min. 45
Min. 35
Min. 0
Min. 0
Min. 0
Min. 10
Min. 0
Min. 0
Min. 0
Min. 0
Min. 0
Min. 0
Min. 35
Min. 35
Min. 30
Min. 30
Typ. 16
Typ. 1
Min. 50
Min. 500
Min. 500
Min. 4
Min. 100
Min. 4
Min. 4
Min. 0
Min. 500
34
12 Unit
120
ns
0
ns
50
ns
50
ns
0
ns
0
ns
0
ns
10
ns
0
ns
0
ns
0
ns
0
ns
0
ns
0
ns
50
ns
50
ns
30
ns
30
ns
16
µs
1
s
50
µs
500
ns
500
ns
4
µs
100
µs
4
µs
4
µs
0
ns
500
ns
(Continued)
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