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MBM29LV652UE-12 查看數據表(PDF) - Fujitsu

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MBM29LV652UE-12 FLASH MEMORY CMOS 64M (4M × 16) BIT Fujitsu
Fujitsu Fujitsu
MBM29LV652UE-12 Datasheet PDF : 58 Pages
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MBM29LV652UE-90/12
s ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Parameter
Symbol
Parameter Description
Test Conditions
Min. Max. Unit
ILI
Input Leakage Current
VIN = VSS to VCC, VCC = VCC Max.,
VCCq = VCCq Max.
–1.0
+1.0 µA
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max.,
VCCq = VCCq Max.
–1.0
+1.0 µA
ILIT
A9, OE, RESET Inputs Leakage
Current
VCC = VCC Max.,
A9, OE, RESET = 12.5 V
35 µA
IACC
ACC Accelerated Program Current
VCC = VCC Max.,
ACC = VACC Max.
20 mA
ICC1 VCC Active Current (Note 1)
CE = VIL, OE = VIH, VCC = VCC Max.,
VCCq = VCCq Max., f = 5 MHz
CE = VIL, OE = VIH, VCC = VCC Max.,
VCCq = VCCq Max., f = 1 MHz
16 mA
7
mA
ICC2 VCC Active Current (Note 2)
CE = VIL, OE = VIH, VCC = VCC Max.,
VCCq = VCCq Max.
40 mA
ICC3
VCC Current (Standby)
VCC = VCC Max., VCCq = VCCq Max.,
CE = VCC ±0.3 V,
RESET = VCC ±0.3 V
5
µA
ICC4 VCC Current (Standby, RESET)
VCC = VCC Max., VCCq = VCCq Max.,
RESET = VSS ±0.3 V
5
µA
VCC = VCC Max., VCCq = VCCq Max.,
ICC5
VCC Current
(Automatic Sleep Mode) (Note 3)
CE = VSS ±0.3 V,
RESET = VCC ±0.3 V,
VIN = VCC ±0.3 V or VSS ±0.3 V
5
µA
VIL
Input Low Level
–0.5
0.6 V
VIH
Input High Level
2.0 VCC + 0.5 V
VACC Voltage for Program Acceleration
11.5
12.5 V
VID
Voltage for Autoselect, Sector
Protection (A9, OE, RESET) (Note 4)
11.5
12.5 V
VOL Output Low Voltage Level
IOL = 4.0 mA, VCC = VCC Min.,
VCCq = VCCq Min.
0.45 V
VOH1
VOH2
Output High Voltage Level
IOH = –2.0 mA, VCC = VCC Min.,
VCCq = VCCq Min.
IOH = –100 µA, VCC Min.,
VCCq = VCCq Min.
2.4
V
VCCq –
0.4
V
VLKO Low VCC Lock-Out Voltage
2.3
2.5 V
Notes: 1. The lCC current listed includes both the DC operating current and the frequency dependent component.
2. lCC active while Embedded Erase or Embedded Program is in progress.
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. Applicable for only VCC applying.
32
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