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MBM29LV652UE-12 查看數據表(PDF) - Fujitsu

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MBM29LV652UE-12 FLASH MEMORY CMOS 64M (4M × 16) BIT Fujitsu
Fujitsu Fujitsu
MBM29LV652UE-12 Datasheet PDF : 58 Pages
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Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect data values or writing them in the improper sequence will reset the devices to the read mode.
Table 3 defines the valid register command sequences. Note that the Erase Suspend (B0h) and Erase Resume
(30h) commands are valid only while the Sector Erase operation is in progress. Moreover both Read/Reset
commands are functionally equivalent, resetting the device to the read mode. Please note that commands are
always written at DQ0 to DQ7 and DQ8 to DQ15 bits are ignored.
Read/Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits (DQ5 = 1) to Read/Reset mode, the Read/
Reset operation is initiated by writing the Read/Reset command sequence into the command register.
Microprocessor read cycles retrieve array data from the memory. The devices remain enabled for reads until the
command register contents are altered.
The devices will automatically power-up in the Read/Reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures
that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for the specific timing parameters.
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM
programmers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high
voltage onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
The Autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write
cycle that contains the address and the Autoselect command. Then the manufacture and device codes can be
read from the address, and an actual data of memory cell can be read from the another address.
Following the command write, a read cycle from address XX00h retrieves the manufacture code of 04h. A read
cycle from address XX01h returns the device code (MBM29LV652UE = 22D7h).
All manufacturer and device codes will exhibit odd parity with DQ7 defined as the parity bit. Sector state (protection
or unprotection) will be informed by address XX02h. Scanning the sector group addresses (A21, A20, A19, A18,
and A17) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” at device output DQ0 for a protected sector group.
The programming verification should be performed by verify sector group protection on the protected sector.
(See Table 2.)
To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and
also to write the Autoselect command during the operation, execute it after writing Read/Reset command
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