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MBM29LV652UE-12 查看數據表(PDF) - Fujitsu

零件编号产品描述 (功能)生产厂家
MBM29LV652UE-12 FLASH MEMORY CMOS 64M (4M × 16) BIT Fujitsu
Fujitsu Fujitsu
MBM29LV652UE-12 Datasheet PDF : 58 Pages
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FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
64M (4M × 16) BIT
MBM29LV652UE -90/12
DS05-20886-1E
s GENERAL DESCRIPTION
The MBM29LV652UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device
is designed to MBM29LV652UEbe programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP
and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard
EPROM programmers.
To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable
(OE) controls.
The MBM29LV652UE is entirely command set compatible with JEDEC single-power-supply Flash standard.
Commands are written to the command register using standard microprocessor write timings. Register contents
serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also
internally latch addresses and data needed for the programming and erase operations.
Typically, each sector can be programmed and verified in about 0.5 seconds.
s PRODUCT LINE UP
Part No.
VCC
=
3.3
V
+0.3 V
–0.3 V
90
Ordering Part No.
VCC
=
3.0
V
+0.6 V
–0.3 V
Max. Address Access Time (ns)
90
Max. CE Access Time (ns)
90
Max. OE Access Time (ns)
35
s PACKAGES
63-pin plastic FBGA
MBM29LV652UE
12
120
120
50
BGA-63P-M02
Direct download click here

 

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