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MBM29LV652UE-12 查看數據表(PDF) - Fujitsu

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MBM29LV652UE-12 FLASH MEMORY CMOS 64M (4M × 16) BIT Fujitsu
Fujitsu Fujitsu
MBM29LV652UE-12 Datasheet PDF : 58 Pages
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MBM29LV652UE-90/12
s FUNCTIONAL DESCRIPTION
Read Mode
The MBM29LV652UE has two control functions which must be satisfied in order to obtain data at the outputs.
CE is the power control and should be used for a device selection. OE is the output control and should be used
to gate data to the output pins if a device is selected.
Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable
access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output
enable access time is the delay from the falling edge of OE to valid data at the output pins. (Assuming the
addresses have been stable for at least tACC-tOE time.) When reading out a data without changing addresses after
power-up, it is necessary to input hardware reset or to change CE pin from “H” or “L”.
Standby Mode
There are two ways to implement the standby mode on the MBM29LV652UE devices, one using both the CE
and RESET pins; the other via the RESET pin only.
When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at VCC ±0.3 V.
Under this condition the current consumed is less than 5 µA Max. During Embedded Algorithm operation, VCC
active current (ICC2) is required even CE = “H”. The device can be read with standard access time (tCE) from either
of these standby modes.
When using the RESET pin only, a CMOS standby mode is achieved with RESET input held at VSS ±0.3 V (CE
= “H” or “L”). Under this condition the current consumed is less than 5 µA Max. Once the RESET pin is taken
high, the device requires tRH of wake up time before outputs are valid for read access.
In the standby mode the outputs are in the high impedance state, independent of the OE input.
Automatic Sleep Mode
There is a function called automatic sleep mode to restrain power consumption during read-out of
MBM29LV652UE data. This mode can be used effectively with an application requesting low power consumption
such as handy terminals.
To activate this mode, MBM29LV652UE automatically switch themselves to low power mode when
MBM29LV652UE addresses remain stable during access fine of 150 ns. It is not necessary to control CE, WE,
and OE on the mode. Under the mode, the current consumed is typically 1 µA (CMOS Level).
Since the data are latched during this mode, the data are read-out continuously. If the addresses are changed,
the mode is canceled automatically and MBM29LV652UE read-out the data for changed addresses.
Output Disable
With the OE input at a logic high level (VIH), output from the devices are disabled. This will cause the output pins
to be in a high impedance state.
Autoselect
The autoselect mode allows the reading out of a binary code from the devices and will identify its manufacturer
and type. This mode is intended for use by programming equipment for the purpose of automatically matching
the devices to be programmed with its corresponding programming algorithm. The Autoselect command may
also be used to check the status of write-protected sectors (see Tables 4.1 and 4.2). This mode is functional
over the entire temperature range of the devices.
To activate this mode, the programming equipment must force VID (11.5 V to 12.5 V) on address pin A9. Two
identifier bytes may then be sequenced from the devices outputs by toggling address A0 from VIL to VIH. All
addresses are DON’T CARES except A0, A1, and A6. (See Table 2.)
The manufacturer and device codes may also be read via the command register, for instances when the
MBM29LV652UE is erased or programmed in a system without access to high voltage on the A9 pin. The
command sequence is illustrated in Table 3. (Refer to Autoselect Command section.)
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