MBM29LV652UE-12 View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MBM29LV652UE-12

FLASH MEMORY CMOS 64M (4M × 16) BIT

Fujitsu 

MBM29LV652UE-90/12

*1: This command is valid while Fast Mode.

*2: This command is valid while RESET = VID.

*3: The valid addresses are A6 to A0.

*4: This command is valid while Hi-ROM mode.

Notes: 1. Address bits = X = “H” or “L” for all address commands except or Program Address (PA) and Sector

Address (SA).

2. Bus operations are defined in Table 2.

3. RA = Address of the memory location to be read.

PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of

the write pulse.

SA = Address of the sector to be erased. The combination of A21, A20, A19, A18, A17, A16 and A15 will

uniquely select any sector.

4. RD = Data read from location RA during read operation.

PD = Data to be programmed at location PA. Data is latched on the falling edge of write pulse.

5. SPA = Sector group address to be protected. Set sector group address (SGA) and (A6, A1, A0) = (0, 1, 0).

SD = Sector group protection verify data. Output 01h at protected sector group addresses and output

00h at unprotected sector group addresses.

6. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.

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