MBM29F080A View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MBM29F080A

FLASH MEMORY CMOS 8M (1M ×8) BIT

Fujitsu 

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MBM29F080A-55/-70/-90

s ERASE AND PROGRAMMING PERFORMANCE

Parameter

Limits

Min.

Typ.

Max.

Sector Erase Time

—

1

8

Byte Programming Time

—

8

150

Chip Programming Time

—

8.4

20

Erase/Program Cycle

100,000

—

—

Unit

Comments

sec

Excludes 00H programming

prior to erasure

µs

Excludes system-level

overhead

sec

Excludes system-level

overhead

cycles

s TSOP(I) PIN CAPACITANCE

Parameter

Symbol

Parameter Description

CIN

COUT

CIN2

Input Capacitance

Output Capacitance

Control Pin Capacitance

Note: Test conditions TA = 25°C, f = 1.0 MHz

Test Setup

VIN = 0

VOUT = 0

VIN = 0

s SOP PIN CAPACITANCE

Parameter

Symbol

Parameter Description

Test Setup

CIN

COUT

CIN2

Input Capacitance

Output Capacitance

Control Pin Capacitance

VIN = 0

VOUT = 0

VIN = 0

Notes: 1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0 MHz

Typ.

Max.

Unit

8

10

pF

8

10

pF

9

10

pF

Typ.

Max.

Unit

8

10.5

pF

8

10

pF

9.5

11

pF

43

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