DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

M74HCT541M1R View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
M74HCT541M1R Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
M74HCT541
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
VCC
(V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance 5.0
5 10
10
10 pF
CPD Power Dissipation
Capacitance (note 5.0
34
pF
1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/8 (per circuit)
TEST CIRCUIT
TEST
tPLH, tPHL
tPZL, tPLZ
tPZH, tPHZ
CL = 50pF/150pF or equivalent (includes jig and probe capacitance)
R1 = 1Kor equivalent
RT = ZOUT of pulse generator (typically 50)
SWITCH
Open
VCC
GND
4/9
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]