M6MGB162S4BVP View Datasheet(PDF) - MITSUBISHI ELECTRIC

Part Name

Description

Manufacturer

M6MGB162S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)

MITSUBISHI ELECTRIC  

MITSUBISHI LSIs

M6MGB/T162S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS

3.3V-ONLY FLASH MEMORY &

4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM

Stacked-MCP (Multi Chip Package)

Write cycle (S-CE control mode)

S-A-1~A17

S-CE

WE#

DQ0~7

tsu (A)

(Note4)

(Note3)

tCW

tsu (CE)

trec (W)

tsu (D) th (D)

DATA IN

STABLE

(Note3)

Note 3: Hatching indicates the state is "don't care".

Note 4: When the falling edge of WE# is simultaneously or priorto the rising edge of S-CE,

the outputs are maintained in the high impedance state.

Note 5: Don't apply inverted phase signal externally when DQ pin is in output mode.

28

Sep. 1999 , Rev.2.0

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