M6MGB162S4BVP View Datasheet(PDF) - MITSUBISHI ELECTRIC

Part Name

Description

Manufacturer

M6MGB162S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)

MITSUBISHI ELECTRIC  

MITSUBISHI LSIs

M6MGB/T162S4BVP

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS

3.3V-ONLY FLASH MEMORY &

4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM

Stacked-MCP (Multi Chip Package)

ABSOLUTE MAXIMUM RATINGS

Symbol

S-Vcc

VI

VO

Pd

Ta

Parameter

Supply voltage

Input voltage

Output voltage

Power dissipation

Operating

temperature

Conditions

With respect to GND

With respect to GND

With respect to GND

Ta=25 C

W-version

Ratings

-0.5* ~ +4.6

-0.5* ~ S-Vcc + 0.5

0 ~ S-Vcc

700

Units

V

mW

- 20 ~ +85

C

Tstg Storage temperature

- 65 ~ +150

C

* -3.0V in case of AC (Pulse width<= 30ns)

DC ELECTRICAL CHARACTERISTICS

( S-Vcc=2.7 ~ 3.6V, unless otherwise noted)

Symbol

Parameter

Conditions

Limits

Min Typ Max

VIH

VIL

VOH1

VOH2

VOL

II

IO

Icc1

Icc2

High-level input voltage

Low-level input voltage

High-level output voltage 1 IOH= -0.5mA

High-level output voltage 2 IOH= -0.05mA

Low-level output voltage IOL=2mA

Input leakage current

VI =0 ~ S-Vcc

Output leakage current S-CE=VIL or OE#=VIH, VI/O=0 ~ S-Vcc

Active supply current

( AC,MOS level )

Active supply current

( AC,TTL level )

S-CE =S-Vcc-0.2V

other inputs <= 0.2V or >= S-Vcc-0.2V

Output - open (duty 100%)

S-CE=VIH

other pins =VIH or VIL

Output - open (duty 100%)

2.2

-0.3 *

2.4

S-Vcc-0.5V

S-Vcc+0.3V

0.6

0.4

±1

±1

f= 10MHz

-

f= 1MHz

-

f= 10MHz

-

f= 1MHz

-

50 70

7 15

50 70

7 15

Icc3

Stand by supply current

( AC,MOS level )

S-CE <= 0.2V

Other inputs=0~S-Vcc

+70 ~ +85 C -

+40 ~ +70 C -

-W

+25 ~ +40 C -

-

40

-

20

1

3.6

Units

V

mA

mA

mA

Icc4 Stand by supply current

( AC,TTL level )

S-CE=VIL

Other inputs= 0 ~ S-Vcc

Note 1: Direction for current flowing into IC is indicated as positive (no mark)

Note 2: Typical value is for S-Vcc=3.0V and Ta=25 C

- 20 ~ +25 C -

0.3 1.2

-

-

0.5

mA

* -3.0V in case of AC (Pulse width<= 30ns)

CAPACITANCE

Symbol Parameter

Conditions

CI

Input capacitance

CO Output capacitance

VI=GND, VI=25mVrms, f=1MHz

VO=GND,VO=25mVrms, f=1MHz

Note: The value of common pins to SRAM is the sum of Flash Memory and SRAM.

(S-Vcc=2.7 ~ 3.6V, unless otherwise noted)

Limits

Min Typ Max

Units

10

10

pF

25

Sep. 1999 , Rev.2.0

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