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M48Z35AY-70MH6TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
M48Z35AY-70MH6TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M48Z35AY-70MH6TR Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
M48Z35AY, M48Z35AV
Table 5. Capacitance (1, 2)
(TA = 25 °C)
Symbol
Parameter
CIN
Input Capacitance
CIO (3) Input / Output Capacitance
Note: 1. Effective capacitance measured with power supply at 5V.
2. Sampled only, not 100% tested.
3. Outputs deselected.
Test Condition
VIN = 0V
VOUT = 0V
Min
Max
Unit
10
pF
10
pF
Table 6. DC Characteristics
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.5V to 5.5V or 3.0v to 3.6V)
Symbol
Parameter
Test Condition
ILI (1)
Input Leakage Current
0V ≤ VIN ≤ VCC
ILO (1) Output Leakage Current
0V ≤ VOUT ≤ VCC
ICC
Supply Current
Outputs open
ICC1
Supply Current (Standby) TTL
E = VIH
ICC2
Supply Current (Standby) CMOS
E = VCC – 0.2V
VIL (2) Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 2.1mA
VOH
Output High Voltage
IOH = –1mA
Note: 1. Outputs deselected.
2. Negative spikes of –1V allowed for up to 10ns once per cycle.
Min
–0.3
2.2
2.4
Max
±1
±5
50
3
3
0.8
VCC + 0.3
0.4
Table 7. Power Down/Up Trip Points DC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C)
Symbol
Parameter
Min
VPFD Power-fail Deselect Voltage (M48Z35AY)
4.2
VPFD Power-fail Deselect Voltage (M48Z35AV)
2.7
VSO
Battery Back-up Switchover Voltage (M48Z35AY)
VSO
Battery Back-up Switchover Voltage (M48Z35AV)
tDR (2) Expected Data Retention Time
10
Note: 1. All voltages referenced to VSS.
2. At 25 °C.
Typ
Max
4.35
4.5
2.9
3.0
3.0
VPFD – 100mV
Unit
µA
µA
mA
mA
mA
V
V
V
V
Unit
V
V
V
V
YEARS
5/16
 

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