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M470L1624FT0-CB3 View Datasheet(PDF) - Samsung

Part Name
Description
Manufacturer
M470L1624FT0-CB3
Samsung
Samsung Samsung
M470L1624FT0-CB3 Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
128MB, 256MB SODIMM
DDR SDRAM
M470L1624FT0 (16M x 64, 128MB Module)
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6 Normal
Low power
IDD7A
B3(DDR333@CL=2.5)
360
500
12
100
80
140
220
800
760
720
12
6
1,400
A2(DDR266@CL=2)
320
460
12
80
72
120
180
680
620
660
12
6
1,200
(VDD=2.7V, T = 10°C)
B0(DDR266@CL=2.5)
Unit Notes
320
mA
460
mA
12
mA
80
mA
72
mA
120
mA
180
mA
680
mA
620
mA
660
mA
12
mA
6
mA Optional
1,200
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M470L3224FT0 (32M x 64, 256MB Module)
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6 Normal
Low power
IDD7A
B3(DDR333@CL=2.5)
580
720
24
200
160
280
440
1,020
980
940
24
12
1,620
A2(DDR266@CL=2)
500
640
24
160
144
240
360
860
800
840
24
12
1,380
(VDD=2.7V, T = 10°C)
B0(DDR266@CL=2.5)
500
Unit Notes
mA
640
mA
24
mA
160
mA
144
mA
240
mA
360
mA
860
mA
800
mA
840
mA
24
mA
12
1,380
mA Optional
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.2 March 2004
 

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