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M470L1624FT0 View Datasheet(PDF) - Samsung

Part Name
Description
Manufacturer
M470L1624FT0
Samsung
Samsung Samsung
M470L1624FT0 Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
128MB, 256MB SODIMM
DDR SDRAM
200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16)
Ordering Information
Part Number
M470L1624FT0-C(L)B3/A2/B0
M470L3224FT0-C(L)B3/A2/B0
M485L1624FT0-C(L)B3/A2/B0
Density
128MB
256MB
128MB
Organization
16M x 64
32M x 64
16M x 72
Component Composition
16Mx16 (K4H561638F) * 4EA
16Mx16 (K4H561638F) * 8EA
16Mx16 (K4H561638F) * 5EA
Height
1,250mil
1,250mil
1,250mil
Operating Frequencies
Speed @CL2
Speed @CL2.5
CL-tRCD-tRP
B3(DDR333@CL=2.5)
133MHz
166MHz
2.5-3-3
A2(DDR266@CL=2)
133MHz
133MHz
2-3-3
B0(DDR266@CL=2.5)
100MHz
133MHz
2.5-3-3
Feature
• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1250 (mil), single(128MB), double(256MB) sided component
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Rev. 1.2 March 2004
 

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