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M485L1624FT0-CB3 View Datasheet(PDF) - Samsung

Part Name
Description
Manufacturer
M485L1624FT0-CB3
Samsung
Samsung Samsung
M485L1624FT0-CB3 Datasheet PDF : 20 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
128MB, 256MB SODIMM
DDR SDRAM
AC Operating Conditions
Parameter/Condition
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
Symbol
Min
Max
Unit
VIH(AC) VREF + 0.31
V
VIL(AC)
VREF - 0.31
V
VID(AC)
0.7
VDDQ+0.6
V
VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2
V
Note
3
3
1
2
Note 1. VID is the magnitude of the difference between the input level on CK and the input on CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same.
3. These parameters should be tested at the pim on actual components and may be checked at either the pin or the pad in simula-
tion. the AC and DC input specificatims are refation to a Vref envelope that has been bandwidth limited 20MHz.
Vtt=0.5*VDDQ
Output
RT=50
Z0=50
CLOAD=30pF
VREF
=0.5*VDDQ
Output Load Circuit (SSTL_2)
Input/Output Capacitance
Parameter
Symbol
Input capacitance(A0 ~ A12, BA0 ~ BA1,RAS,CAS,WE )
Input capacitance(CKE0, CKE1)
Input capacitance( CS0, CS1)
Input capacitance( CLK0, CLK1,CLK2)
Input capacitance(DM0~DM7,DM8(for ECC))
Data & DQS input/output capacitance(DQ0~DQ63)
Data input/output capacitance (CB0~CB7)
CIN1
CIN2
CIN3
CIN4
CIN5
Cout1
Cout2
(VDD=2.5V, VDDQ=2.5V, TA= 25°C, f=1MHz)
M470L1624FT0 M470L3224FT0 M485L1624FT0 Unit
Min Max Min Max Min Max
41
45
49
57
41
45
pF
34
38
42
50
34
38
pF
34
38
42
50
34
38
pF
25
30
25
30
25
30
pF
6
7
6
7
6
7
pF
6
7
6
7
6
7
pF
-
-
-
-
6
7
pF
Rev. 1.2 March 2004
 

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