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M36W0R6040B0 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
M36W0R6040B0 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package ST-Microelectronics
STMicroelectronics ST-Microelectronics
M36W0R6040B0 Datasheet PDF : 18 Pages
First Prev 11 12 13 14 15 16 17 18
M36W0R6040T0, M36W0R6040B0
Table 7. Flash Memory DC Characteristics - Voltages
Symbol
Parameter
Test Condition
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
IOL = 100µA
VOH Output High Voltage
IOH = –100µA
VPP1 VPPF Program Voltage-Logic
Program, Erase
VPPH VPPF Program Voltage Factory
Program, Erase
VPPLK Program or Erase Lockout
VLKO VDDF Lock Voltage
VRPH
RPF pin Extended High
Voltage
Min
Typ
Max
Unit
–0.5
0.4
V
VDDQ –0.4
VDDQ + 0.4 V
0.1
V
VDDQ –0.1
V
1.1
1.8
3.3
V
11.4
12
12.6
V
0.4
V
1
V
3.3
V
Table 8. PSRAM DC Characteristics
Symbol
Parameter
Test Condition
Min
Max
Unit
ICC1
ICC2
VDDP Active Current
VDDP = 1.95V,
VIN = VIH or VIL,
E1P = VIL and E2P = VIH,
IOUT = 0mA
tAVAV Read /
tAVAV Write =
minimum
tAVAV Read /
tAVAV Write =
maximum
20
mA
3
mA
ILI Input Leakage Current
0V VIN VDDP
–1
1
µA
ILO Output Leakage Current
0V VOUT VDDP
–1
1
µA
IPD Deep Power Down Current
VDDP = 1.95V,
E1P VDDP –0.2V or E1P VIL,
VIN VDDP –0.2V or VIN 0.2V
10
µA
ISB
Standby Supply Current
CMOS
VDDP = 1.95V,
E1P = E2P VDDP –0.3V,
IOUT = 0mA
110
µA
VIH (1) Input High Voltage
0.8VDDP VDDP + 0.2 V
VIL (2) Input Low Voltage
–0.3
0.4
V
VOH Output High Voltage
IOH = –0.5mA
VDDP
0.2
V
VOL Output Low Voltage
IOL = 0.1mA
0.2
V
Note: 1. The maximum DC voltage on input and I/O pins is VDDP+0.2V. During voltage transitions, inputs may overshoot VDDP by 1.0V for
periods of up to 5ns.
2. The minimum DC voltage on input or I/O pins is –0.3V. During voltage transitions, inputs may undershoot VSS by 1.0V for periods
of up to 5ns.
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