M36W0R6040B0 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M36W0R6040B0

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package

STMicroelectronics 

M36W0R6040T0, M36W0R6040B0

DC AND AC PARAMETERS

This section summarizes the operating measure-

ment conditions, and the DC and AC characteris-

tics of the device. The parameters in the DC and

AC characteristics Tables that follow, are derived

from tests performed under the Measurement

Conditions summarized in Table 4., Operating and

AC Measurement Conditions. Designers should

check that the operating conditions in their circuit

match the operating conditions when relying on

the quoted parameters.

Table 4. Operating and AC Measurement Conditions

Parameter

Flash Memory

Min

Max

PSRAM

Unit

Min

Max

VDDF Supply Voltage

1.7

1.95

–

–

V

VDDP Supply Voltage

–

–

1.7

1.95

V

VDDQ Supply Voltage

1.7

1.95

–

–

V

VPPF Supply Voltage (Factory environment)

11.4

12.6

–

–

V

VPPF Supply Voltage (Application environment)

–0.4

VDDQ +0.4

–

–

V

Ambient Operating Temperature

–40

85

–30

85

°C

Load Capacitance (CL)

30

50

pF

Input Rise and Fall Times

5

ns

Input Pulse Voltages

0 to VDDQ

0 to VDDP

V

Input and Output Timing Ref. Voltages

VDDQ/2

VDDP/2

V

Figure 5. AC Measurement I/O Waveform

VDDQ

0V

VDDQ/2

AI06161

Figure 6. AC Measurement Load Circuit

VDDQ

VDDF VDDQ

0.1µF

0.1µF

DEVICE

UNDER

TEST

16.7kΩ

CL

16.7kΩ

Table 5. Device Capacitance

Symbol

Parameter

CIN

Input Capacitance

COUT

Output Capacitance

Note: Sampled only, not 100% tested.

Test Condition

VIN = 0V

VOUT = 0V

CL includes JIG capacitance

AI08364

Min

Max

Unit

12

pF

15

pF

12/18

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