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M36W0R6040B0 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
M36W0R6040B0 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package ST-Microelectronics
STMicroelectronics ST-Microelectronics
M36W0R6040B0 Datasheet PDF : 18 Pages
First Prev 11 12 13 14 15 16 17 18
M36W0R6040T0, M36W0R6040B0
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 3. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
Min
Max
TA
Ambient Operating Temperature
–30
85
°C
TBIAS
Temperature Under Bias
–40
125
°C
TSTG
Storage Temperature
–65
155
°C
TLEAD
Lead Temperature during Soldering
(1)
°C
VIO
Input or Output Voltage
–0.5
VDDQ+0.6
V
VDDF
Flash Memory Core Supply Voltage
–0.2
2.45
V
VDDQ
Input/Output Supply Voltage
–0.2
2.45
V
VDDP
PSRAM Supply Voltage
–0.2
3.3
V
VPPF
Flash Memory Program Voltage
–0.2
14
V
IO
Output Short Circuit Current
100
mA
tVPPFH
Time for VPPF at VPPFH
100
hours
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
11/18
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