M36W216 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M36W216

16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product

STMicroelectronics 

M36W216TI, M36W216BI

Table 30. Device Geometry Definition

Offset Word

Mode

Data

Description

27h

0015h Device Size = 2n in number of bytes

28h

29h

0001h

0000h

Flash Device Interface Code description

2Ah

2Bh

0002h

0000h

Maximum number of bytes in multi-byte program or page = 2n

Number of Erase Block Regions within the device.

2Ch

0002h It specifies the number of regions within the device containing contiguous

Erase Blocks of the same size.

2Dh

001Eh Region 1 Information

2Eh

0000h Number of identical-size erase block = 001Eh+1

2Fh

0000h Region 1 Information

30h

0001h Block size in Region 1 = 0100h * 256 byte

31h

0007h Region 2 Information

32h

0000h Number of identical-size erase block = 0007h+1

33h

0020h Region 2 Information

34h

0000h Block size in Region 2 = 0020h * 256 byte

2Dh

0007h Region 1 Information

2Eh

0000h Number of identical-size erase block = 0007h+1

2Fh

0020h Region 1 Information

30h

0000h Block size in Region 1 = 0020h * 256 byte

31h

001Eh Region 2 Information

32h

0000h Number of identical-size erase block = 001Eh+1

33h

0000h Region 2 Information

34h

0001h Block size in Region 2 = 0100h * 256 byte

Value

2 MByte

x16

Async.

4

2

31

64 KByte

8

8 KByte

8

8 KByte

31

64 KByte

49/62

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