Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

M36W216 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
M36W216 16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product ST-Microelectronics
STMicroelectronics ST-Microelectronics
M36W216 Datasheet PDF : 62 Pages
First Prev 41 42 43 44 45 46 47 48 49 50 Next Last
M36W216TI, M36W216BI
Table 29. CFI Query System Interface Information
Offset
Data
Description
VDD Logic Supply Minimum Program/Erase or Write voltage
1Bh
0027h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VDD Logic Supply Maximum Program/Erase or Write voltage
1Ch
0036h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VPP [Programming] Supply Minimum Program/Erase voltage
1Dh
00B4h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh
00C6h
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
1Fh
0004h Typical time-out per single word program = 2n µs
20h
0004h Typical time-out for Double Word Program = 2n µs
21h
000Ah Typical time-out per individual block erase = 2n ms
22h
0000h Typical time-out for full chip erase = 2n ms
23h
0005h Maximum time-out for word program = 2n times typical
24h
0005h Maximum time-out for Double Word Program = 2n times typical
25h
0003h Maximum time-out per individual block erase = 2n times typical
26h
0000h Maximum time-out for chip erase = 2n times typical
Value
2.7V
3.6V
11.4V
12.6V
16µs
16µs
1s
NA
512µs
512µs
8s
NA
48/62
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]