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M36W216 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
M36W216 16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product ST-Microelectronics
STMicroelectronics ST-Microelectronics
M36W216 Datasheet PDF : 62 Pages
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M36W216TI, M36W216BI
Figure 24. SRAM Low VDDS Data Retention AC Waveforms, E1S or UBS / LBS Controlled
VDDS
E1S or
UBS, LBS
VDDS (min)
DATA RETENTION MODE
tCDR
tR
VDDS (min)
AI07918
Table 24. SRAM Low VDDS Data Retention Characteristic
Symbol
Parameter
Test Condition
IDDDR
Supply Current (Data
Retention)
VDDS = 1.5V, E1S VDDS – 0.2V,
VIN VDDS – 0.2V or VIN 0.2V
VDR
Supply Voltage (Data
Retention)
tCDR Chip Disable to Power Down
E1S VCCS – 0.2V, E2S 0.2V
tR
Operation Recovery Time
Note: 1. All other Inputs VIH VDDS –0.2V or VIL 0.2V.
2. Sampled only. Not 100% tested.
Min Typ Max Unit
3
10 µA
1.5
3.3 V
0
ns
70
ns
45/62
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