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M36W216 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
M36W216 16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product ST-Microelectronics
STMicroelectronics ST-Microelectronics
M36W216 Datasheet PDF : 62 Pages
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M36W216TI, M36W216BI
Table 12. Read Block Lock Signature
Block Status EF GF WF A0 A1 A2-A7 A8-A11
A12-A19 DQ0 DQ1 DQ2-DQ15
Locked Block
VIL VIL VIH VIL VIH
0 Don’t Care Block Address 1
0
00h
Unlocked Block
VIL VIL VIH VIL VIH
0 Don’t Care Block Address 0
0
00h
Locked-Down
Block
VIL VIL VIH VIL VIH
0 Don’t Care Block Address X (1) 1
00h
Note: 1. A Locked-Down Block can be locked "DQ0 = 1" or unlocked "DQ0 = 0"; see Block Locking section.
Table 13. Read Protection Register and Lock Register
Word
EF GF WF A0-A7 A8-A19
DQ0
Lock
VIL VIL VIH 80h Don’t Care
0
Unique ID 0 VIL VIL VIH 81h Don’t Care ID data
Unique ID 1 VIL VIL VIH 82h Don’t Care ID data
Unique ID 2 VIL VIL VIH 83h Don’t Care ID data
Unique ID 3 VIL VIL VIH 84h Don’t Care ID data
OTP 0
VIL VIL VIH 85h Don’t Care OTP data
OTP 1
VIL VIL VIH 86h Don’t Care OTP data
OTP 2
VIL VIL VIH 87h Don’t Care OTP data
OTP 3
VIL VIL VIH 88h Don’t Care OTP data
DQ1
OTP Prot.
data
ID data
ID data
ID data
ID data
OTP data
OTP data
OTP data
OTP data
DQ2 DQ3-DQ7 DQ8-DQ15
Security
prot. data
00h
00h
ID data ID data ID data
ID data ID data ID data
ID data ID data ID data
ID data ID data ID data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
Table 14. Program, Erase Times and Program/Erase Endurance Cycles
Parameter
Test Conditions
M36W216TI
Min
Typ
Max
Word Program
VPP = VDD
10
200
Double Word Program
VPP = 12V ±5%
10
200
Main Block Program
VPP = 12V ±5%
VPP = VDD
0.16
5
0.32
5
Parameter Block Program
VPP = 12V ±5%
VPP = VDD
0.02
4
0.04
4
Main Block Erase
VPP = 12V ±5%
VPP = VDD
1
10
1
10
Parameter Block Erase
VPP = 12V ±5%
VPP = VDD
0.8
10
0.8
10
Program/Erase Cycles (per Block)
100,000
Unit
µs
µs
s
s
s
s
s
s
s
s
cycles
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