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M36W216 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
M36W216 16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product ST-Microelectronics
STMicroelectronics ST-Microelectronics
M36W216 Datasheet PDF : 62 Pages
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M36W216TI, M36W216BI
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table 4,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
Table 4. Operating and AC Measurement Conditions
SRAM
Parameter
70
Min
Max
VDDF Supply Voltage
VDDQF Supply Voltage
VDDS Supply Voltage
2.7
3.3
Ambient Operating Temperature
– 40
85
Load Capacitance (CL)
30
Input Rise and Fall Times
1V/ns
Input Pulse Voltages
0 to VDDQF
Input and Output Timing Ref. Voltages
VDDQF/2
Flash Memory
70/85
Min
Max
2.7
3.3
2.7
3.3
– 40
85
50
5ns
0 to VDDQF
VDDQF/2
Units
V
V
V
°C
pF
V
V
Figure 5. AC Measurement I/O Waveform
VDDQ
0V
Note: VDDQ means VDDQF = VDDS
VDDQ/2
AI90258
Figure 6. AC Measurement Load Circuit
VDDQF
VDDQF
VDDF
0.1µF
0.1µF
DEVICE
UNDER
TEST
25k
CL
25k
Table 5. Device Capacitance
Symbol
Parameter
CIN
Input Capacitance
COUT
Output Capacitance
Note: Sampled only, not 100% tested.
CL includes JIG capacitance
AI90259
Test Condition
Typ
VIN = 0V, f=1 MHz
VOUT = 0V, f=1 MHz
Max
Unit
12
pF
15
pF
12/62
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