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M29W800DB70M1 View Datasheet(PDF) - Numonyx -> Micron

Part NameDescriptionManufacturer
M29W800DB70M1 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Numonyx
Numonyx -> Micron Numonyx
M29W800DB70M1 Datasheet PDF : 52 Pages
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Command interface
M29W800DT, M29W800DB
Table 5.
Commands, 8-bit mode, BYTE = VIL(1)
Bus write operations
Command
1st
2nd
3rd
4th
5th
6th
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read/Reset
1 X F0
3 AAA AA 555 55 X F0
Auto Select
3 AAA AA 555 55 AAA 90
Program
4 AAA AA 555 55 AAA A0 PA PD
Unlock Bypass
3 AAA AA 555 55 AAA 20
Unlock Bypass
Program
2 X A0 PA PD
Unlock Bypass Reset 2 X 90 X 00
Chip Erase
6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10
Block Erase
6+ AAA AA 555 55 AAA 80 AAA AA 555 55 BA 30
Erase Suspend
1 X B0
Erase Resume
1 X 30
Read CFI Query
1 AA 98
1. X don’t care, PA program address, PD program data, BA any address in the block.
All values in the table are in hexadecimal.
The command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15
are don’t care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
Table 6.
Program, erase times and program, erase endurance cycles
Parameter
Min.
Typ. (1)(2)
Chip erase
12
Block erase (64 Kbytes)
0.8
Erase suspend latency time
15
Program (byte or word)
10
Chip program (byte by byte)
12
Chip program (word by word)
6
Program/erase cycles (per block)
Data retention
100,000
20
Max.(2)
60(3)
6(4)
25(3)
200(3)
60(3)
30(4)
Unit
s
s
µs
µs
s
s
cycles
years
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and VCC after 100,000 program/erase cycles.
4. Maximum value measured at worst case conditions for both temperature and VCC.
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