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M29W800DB70M1 View Datasheet(PDF) - Numonyx -> Micron

Part Name
Description
Manufacturer
M29W800DB70M1 Datasheet PDF : 52 Pages
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M29W800DT
M29W800DB
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block)
3 V supply flash memory
Features
Supply voltage
– VCC = 2.7 V to 3.6 V for program, erase and
read
Access times: 45, 70, 90 ns
Programming time
– 10 µs per byte/word typical
19 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 16 main blocks
Program/erase controller
– Embedded byte/word program algorithms
Erase suspend and resume modes
– Read and program another block during
erase suspend
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Common flash interface
– 64-bit security code
Low power consumption
– Standby and automatic standby
100,000 program/erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W800DT: 22D7h
– Bottom device code M29W800DB: 225Bh
SO44 (M)
TSOP48 (N)
12 x 20 mm
FBGA
TFBGA48 (ZE)
6 x 8 mm
March 2008
Rev 10
1/52
www.numonyx.com
1
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