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M29W320EB View Datasheet(PDF) - Numonyx -> Micron

Part NameDescriptionManufacturer
M29W320EB 32Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory Numonyx
Numonyx -> Micron Numonyx
M29W320EB Datasheet PDF : 63 Pages
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M29W320ET, M29W320EB
Common Flash Interface (CFI)
Table 24. CFI Query System Interface Information
Address
x16
x8
Data
Description
VCC Logic Supply Minimum Program/Erase voltage
1Bh
36h
0027h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
VCC Logic Supply Maximum Program/Erase voltage
1Ch
38h
0036h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
VPP [Programming] Supply Minimum Program/Erase voltage
1Dh
3Ah
00B5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh
3Ch
00C5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
1Fh
3Eh
0004h Typical timeout per single byte/word program = 2n µs
20h
40h
0000h Typical timeout for minimum size write buffer program = 2n µs
21h
42h
000Ah Typical timeout per individual block erase = 2n ms
22h
44h
0000h Typical timeout for full Chip Erase = 2n ms
23h
46h
0004h Maximum timeout for byte/word program = 2n times typical
24h
48h
0000h Maximum timeout for write buffer program = 2n times typical
25h
4Ah
0003h Maximum timeout per individual block erase = 2n times typical
26h
4Ch
0000h Maximum timeout for Chip Erase = 2n times typical
Value
2.7V
3.6V
11.5V
12.5V
16µs
NA
1s
NA
256 µs
NA
8s
NA
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