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M29W320EB View Datasheet(PDF) - Numonyx -> Micron

Part Name
Description
Manufacturer
M29W320EB Datasheet PDF : 63 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
M29W320ET
M29W320EB
32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block)
3V supply Flash memory
Features
Supply voltage
– VCC = 2.7V to 3.6V for Program, Erase and
Read
– VPP =12V for Fast Program (optional)
Access times: 70, 90ns
Programming time
– 10µs per byte/word typical
– Double word/ Quadruple byte Program
Memory Blocks
– Memory Array: 63 Main Blocks
– 8 Parameter Blocks (Top or Bottom
Location)
Erase Suspend and Resume modes
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
VPP/WP pin for fast Program and Write Protect
Temporary Block Unprotection mode
Common Flash Interface
– 64 bit Security code
Extended memory Block
– Extra block used as security block or to
store additional information
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top Device code M29W320ET: 2256h
– Bottom Device code M29W320EB: 2257h
ECOPACK® packages available
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZE)
6 x 8mm
March 2008
Rev 6
1/63
www.numonyx.com
1
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