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W29C040P-12B View Datasheet(PDF) - Winbond

Part NameDescriptionManufacturer
W29C040P-12B 512K ´8 CMOS FLASH MEMORY Winbond
Winbond Winbond
W29C040P-12B Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
W29C040
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Power Supply Voltage to Vss Potential
Operating Temperature
Storage Temperature
D.C. Voltage on Any Pin to Ground Potential Except A9
Transient Voltage (<20 nS ) on Any Pin to Ground Potential
Voltage on A9 and OE Pin to Ground Potential
RATING
-0.5 to +7.0
0 to +70
-65 to +150
-0.5 to VDD +1.0
-1.0 to VDD +1.0
-0.5 to 12.5
UNIT
V
°C
°C
V
V
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
Power Supply Current
Standby VDD Current
(TTL input)
Standby VDD Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
CMOS
ICC
ISB1
ISB2
CE = OE = VIL, WE = VIH,
all DQs open
Address inputs = VIL/VIH,
at f = 5 MHz
CE = VIH, all DQs open
Other inputs = VIL/VIH
CE = VDD -0.3V, all DQs
open
ILI
VIN = GND to VDD
ILO
VIN = GND to VDD
VIL
-
VIH
-
VOL IOL = 2.0 mA
VOH1 IOH = -400 µA
VOH2 IOH = -100 µA; VCC = 4.5V
LIMITS
UNIT
MIN. TYP. MAX.
-
-
50 mA
-
2
3
mA
-
20 100 µA
-
-
10 µA
-
-
10 µA
-
-
0.8
V
2.0
-
-
V
-
- 0.45 V
2.4
-
-
V
4.2
-
-
V
- 10 -
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