DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

M22100 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
M22100 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
M22100B
DC SPECIFICATIONS
Test Condition
Value
Symbol
Parameter
VI VDD
TA = 25°C
-40 to 85°C -55 to 125°C Unit
(V) (V) Min. Typ. Max. Min. Max. Min. Max.
IL Quiescent Supply
Current
F1
5
0.04 5
10
0.04 10
15
0.04 20
150
150
300
300
600
600
20
0.08 100
3000
3000 µA
5
0.04 20
150
150
B1
10
0.04 40
300
300
15
0.04 80
600
600
RON Resistance
5
F1
Any
Switch
10
12
225 1250
85 180
75 135
1625
230
175
1625
230
175
15
5
65 95
225 1250
125
1440
125
1440
B1
VIS =
0 to VDD
10
12
85 180
205
205
75 135
155
155
15
65 95
110
110
ON Resistance RON
5
35
(between any two
channels)
10
20
12
18
15
15
OFF Channel Leak- F1
age Current
B1
All 0/18 18
Switch
OFF 0/15 15
±10-3 ± 0.1*
±10-3 ± 0.3
±1
±1
±1
µA
±1
CONTROL
VIL Low Level Input
Voltage
5
1.5
1.5
1.5
10
3
3
3
V
15
4
4
4
VIH High Level Input
Voltage
5 3.5
10 7
3.5
3.5
7
7
V
15 11
11
11
II Input Current
F1 Any 0/18 18
±10-5 ±0.1*
±1
Control
B1 Input 0/15 15
±10-5 ±0.3
±1
±1
µA
±1
CI Input Capacitance
Any Input
5 7.5
pF
The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
* : Determined by minimum feasible leakage measurement for automating testing
4/10
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]