M16C62_M View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
M16C62_M Datasheet PDF : 25 Pages
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Electrical characteristics (Vcc = 3V)
Mitsubishi microcomputers
M16C / 62M (80-pin version) Group
(Low voltage version)
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
VCC = 3V
Table 1.20.3. A-D conversion characteristics (referenced to VCC = AVCC = VREF = 2.4V to 3.6V, VSS =
AVSS = 0V at Ta = – 20oC to 85oC / – 40oC to 85oC(Note2), f(XIN) = 10MHz unless otherwise
specified)
Symbol
Parameter
RLADDER
Resolution
Absolute accuracy, sample & hold function not available (8 bit)
Ladder resistance
Measuring condition
VREF = VCC
VREF = VCC = 3V, φAD = f(XIN)/2
VREF = VCC
Standard
Min. Typ. Max Unit
10 Bits
±2 LSB
10
40 kΩ
tCONV
tSAMP
VREF
VIA
Conversion time(8bit), sample & hold
function not available
Sampling time
Reference voltage
Analog input voltage
VREF = VCC = 3V, φAD =
9.8
f(XIN) =fAD/2 = 5MHz
0.3
2.4
0
VCC µs
µs
VCC
V
VREF V
Note 1: Connect AV CC pin to VCC pin and apply the same electric potential.
Note 2: Specify a product of -40°C to 85°C to use it.
Table 1.20.4. D-A conversion characteristics (referenced to VCC = 2.4V to 3.6V, VSS = AVSS = 0V,
VREF = 3V, at Ta = – 20oC to 85oC / – 40oC to 85oC(Note2), f(XIN) = 10MHz unless
otherwise specified)
Symbol
Parameter
Measuring condition
Standard
Min. Typ. Max. Unit
Resolution
Absolute accuracy
tsu
Setup time
8 Bits
1.0 %
3 µs
RO
IVREF
Output resistance
Reference power supply input current
(Note)
4 10 20 kΩ
1.5 mA
Note 1: This applies when using one D-A converter, with the D-A register for the unused D-A converter set to
“0016”.
The A-D converter's ladder resistance is not included.
Also, when DA register contents are not “00”, the current I VREF always flows even though Vref may have
been set to be unconnected by the A-D control register.
Note 2: Specify a product of -40°C to 85°C to use it.
Table 1.20.5. Flash memory version electrical characteristics
(referenced to VCC = 2.7V to 3.6V, at Ta =0oC to 60oC unless otherwise specified)
Page program time
Parameter
Standard
Min.
Typ.
Max
Unit
6
120
ms
Block erase time
Erase all unlocked blocks time
Lock bit program time
50
600
ms
50 X n (Note) 600 X n (Note) ms
6
120
ms
Note : n denotes the number of block erases.
Table 1.20.6. Flash memory version program voltage and read operation voltage characteristics
(Ta =0oC to 60oC)
Flash program voltage
Flash read operation voltage
VCC=2.7V to 3.6V
VCC=2.4V to 3.6V
VCC=2.7V to 3.4V
VCC=2.2V to 2.4V
10
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