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M14C16-WS21 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
M14C16-WS21 Memory Card IC 16/4 Kbit Serial I²C Bus EEPROM ST-Microelectronics
STMicroelectronics ST-Microelectronics
M14C16-WS21 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
M14C16
M14C04
Memory Card IC
16/4 Kbit Serial I²C Bus EEPROM
s Two Wire I2C Serial Interface
Supports 400 kHz Protocol
s Single Supply Voltage (2.5 V to 5.5 V)
s Hardware Write Control
s BYTE and PAGE WRITE (up to 16 Bytes)
s BYTE, RANDOM and SEQUENTIAL READ
Modes
s Self-Timed Programming Cycle
s Automatic Address Incrementing
s Enhanced ESD/Latch-Up Behaviour
s 1 Million Erase/Write Cycles (minimum)
s 40 Year Data Retention (minimum)
s 5 ms Programming Time (typical)
DESCRIPTION
Each device is an electrically erasable program-
mable memory (EEPROM) fabricated with STMi-
croelectronics’s High Endurance, Single
Polysilicon, CMOS technology. This guarantees
an endurance typically well above one million
Erase/Write cycles, with a data retention of
40 years. The memory operates with a power sup-
ply as low as 2.5 V.
The M14C16 and M14C04 are each available in
wafer form (either sawn or unsawn) and in micro-
module form (on film).
Each memory is compatible with the I2C memory
standard. This is a two wire serial interface that
Table 1. Signal Names
SDA
Serial Data/Address Input/
Output
SCL
Serial Clock
WC
Write Control
VCC
Supply Voltage
GND
Ground
Micromodule (D20)
Wafer
Figure 1. Logic Diagram
VCC
SCL
WC
M14xxx
GND
SDA
AI02217
March 1999
1/13
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