TC1014-2.7VCT View Datasheet(PDF) - TelCom Semiconductor Inc => Microchip

Part Name

Description

Manufacturer

TC1014-2.7VCT

50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS

TelCom Semiconductor Inc => Microchip 

PRELIMINARY INFORMATION

100mA CMOS LDO WITH SHUTDOWN

AND REFERENCE BYPASS

TC1015

ABSOLUTE MAXIMUM RATINGS*

Input Voltage .................................................................7V

Output Voltage .................................. (– 0.3) to (VIN + 0.3)

Power Dissipation .................... Internally Limited (Note 7)

Operating Temperature .................... – 40°C < TJ < 125°C

Storage Temperature ............................ – 65°C to +150°C

Maximum Voltage On Any Pin .......... VIN + 0.3V to – 0.3V

*Stresses beyond those listed under "Absolute Maximum Ratings" may

cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond

those indicated in the operational sections of the specifications is not

implied. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

ELECTRICAL CHARACTERISTICS: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted.

Boldface type specifications apply for junction temperatures of – 40°C to +125°C.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

VIN

IOUTMAX

VOUT

TCVOUT

Input Operating Voltage

Maximum Output Current

Output Voltage

VOUT Temperature Coefficient

∆VOUT/∆VIN

∆VOUT/VOUT

Line Regulation

Load Regulation

VIN – VOUT Dropout Voltage (Note 4)

IGND

IIN

IINSD

PSRR

IOUTSC

∆VOUT/∆PD

eN

Ground Pin Current

Supply Current

Shutdown Supply Current

Power Supply Rejection Ratio

Output Short Circuit Current

Thermal Regulation

Output Noise

SHDN Input

Note 1

Note 2

—

100

VR – 2.5%

(VR + 1V) < VIN < 6V

—

IL = 1.0mA to IOUTMAX

—

(Note 3)

IL = 0.1mA

—

IL = 20mA

IL = 50mA

IL =100mA

(Note 4)

IL = IOUTMAX, (Note 5)

—

SHDN = VIH, IL = 0

—

SHDN = 0V

—

FRE ≤ 1kHz

—

VOUT = 0V

—

Note 6

—

IL = IOUTMAX

—

470pF from Bypass to GND

—

—

VR ±0.5%

20

40

0.01

0.5

20

70

93

112

—

50

—

64

300

0.04

260

6.5

—

VR + 2.5%

—

—

—

—

0

—

0.05

—

500

—

—

V

mA

V

ppm/°C

%

%

mV

µA

µA

µA

dB

mA

%/W

nV/√Hz

VIH

SHDN Input High Threshold

VIN = 2.5V to 6.5V

45

—

—

%VIN

VIL

SHDN Input Low Threshold

VIN = 2.5V to 6.5V

—

—

15

%VIN

NOTES: 1. VR is the regulator output voltage setting. VR = 2.5V, 2.7V, 3.0V, 3.3V, 5.0V.

2. TCVOUT = (VOUTMAX – VOUTMIN) x 10 6

VOUT x ∆T

3. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load

range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the

thermal regulation specification.

4. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V

differential.

5. Ground pin current is the regulator pass transistor gate current. The total current drawn from the input supply is the sum of the load

current, ground current and supply current (i.e. IIN = ISUPPLY + IGND + ILOAD).

6. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load

or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10msec.

7. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the

thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to

initiate thermal shutdown. Please see Thermal Considerations section of this data sheet for more details.

.

TC1015-01-6/5/97

2

Share Link: