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APT5020BN View Datasheet(PDF) - Advanced Power Technology

Part NameAPT5020BN APT
Advanced Power Technology  APT
DescriptionPOWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT5020BN Datasheet PDF : 4 Pages
1 2 3 4
200
100
APT5020BN
APT5022BN
OPERATION HERE
LIMITED BY RDS (ON)
APT5020BN
APT5022BN
10
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
10µS
100µS
1mS
10mS
100mS
DC
.1
1
5 10
50 100
500 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
ID = ID [Cont.]
VDS=100V
16
VDS=250V
12
8
VDS=400V
4
0
0
40
80
120
160 200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10,000
5,000
APT5020/5022BN
Ciss
1,000
500
Coss
Crss
100
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
20
TJ =+25°C
10
5
2
1
0 0.5 1.0 1.5 2.0 2.5 3.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247AD Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.55 (.140)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
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