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APT5020BN View Datasheet(PDF) - Advanced Power Technology

Part NameAPT5020BN APT
Advanced Power Technology  APT
DescriptionPOWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT5020BN Datasheet PDF : 4 Pages
1 2 3 4
APT5020/5022BN
20
VGS=6.5, 7, 8, &10V
16
6V
12
5.5V
8
4
5V
4.5V
00
50
100 150 200 250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
40
TJ = -55°C
TJ = +25°C
VDS> ID (ON) x RDS (ON)MAX.
32
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +125°C
24
16
8
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
28
24
APT5020BN
20
APT5022BN
16
12
8
4
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
ID = 0.5 ID [Cont.]
VGS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
20
VGS=10V
16
8V
6.5V
7V
6V
12
5.5V
8
4
5V
4.5V
00
1
2
3
4
5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
2.50
2.00
TJ = 25°C
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
VGS = 10V @ 0.5 ID [Cont.]
1.50
VGS=10V
1.00
VGS=20V
0.50
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.2
1.1
1.0
0.9
0.8
0.7-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
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