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APT5020BN View Datasheet(PDF) - Advanced Power Technology

Part NameAPT5020BN APT
Advanced Power Technology  APT
DescriptionPOWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT5020BN Datasheet PDF : 4 Pages
1 2 3 4
D
G
S
TO-247
APT5020BN 500V 28.0A 0.20
POWER MOS IV®
APT5022BN 500V 27.0A 0.22
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT
5020BN
APT
5022BN
UNIT
VDSS Drain-Source Voltage
500
500
Volts
ID
Continuous Drain Current @ TC = 25°C
IDM
Pulsed Drain Current 1
VGS Gate-Source Voltage
28
27
112
108
±30
Amps
Volts
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
360
Watts
2.9
W/°C
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN
BVDSS
Drain-Source Breakdown Voltage
(VGS = 0V, ID = 250 µA)
APT5020BN
500
APT5022BN
500
ID(ON)
On State Drain Current 2
(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
APT5020BN
28
APT5022BN
27
Drain-Source On-State Resistance 2
RDS(ON) (VGS = 10V, 0.5 ID [Cont.])
APT5020BN
APT5022BN
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
2
THERMAL CHARACTERISTICS
TYP MAX UNIT
Volts
Amps
0.20
0.22
250
1000
±100
4
Ohms
µA
nA
Volts
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.34
40
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
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